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| > Multycrystalline Silicon Ingot |
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| > Multycrystalline Silicon Ingot |
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| > Multycrystalline Siliom Wafers |
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 Specification |
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Geometry: square
Conduction type: p boron doped
Wafer dimension: 125¡Á125mm¡À0.5mm |
| Oxygen concentration: £¼2¡Á10E18atoms/cm |
3 |
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| Carbon concentration: £¼8¡Á10E17atoms/cm |
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Resistivity: 0.8-3¦¸cm, typically 1¦¸cm
Life time: min.2¦Ìs
Thickness: 220+/-20¦Ìm
TTV: max.40¦Ìm
Saw Marks: max.20¦Ìm
Squaring Angle : 90¡ã+/- 3.0¡ã
Edge flaw: less than 10mm in length, 1.0mm in width
Chipping: depth ¡Ü1.0 mm, no more than 2 chips allowed in one wafer. ¡°V¡± shaped chip not permitted.
Surface: as cut and cleaned |
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| Specification |
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Geometry: square
Conduction type: p boron doped
Wafer dimension: 156¡Á156mm¡À0.5mm |
| Oxygen concentration: £¼2¡Á10E18atoms/cm |
3 |
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| Carbon concentration: £¼8¡Á10E17atoms/cm |
3 |
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Resistivity: 0.8-3¦¸cm, typically 1¦¸cm
Life time: min.2¦Ìs
Thickness: 220+/-40¦Ìm,
TTV: max.50¦Ìm
Saw Marks: max.20¦Ìm
Squaring Angle :90¡ã+/- 3.0¡ã
Edge flaw: less than 10mm in length, 1.0mm in width
Chipping: depth ¡Ü1.0 mm, no more than 2 chips allowed in one wafer. ¡°V¡± shaped chip not permitted.
Surface: as cut and cleaned |
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