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 产品规格 |
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Geometry: square
Conduction type: p boron doped
Wafer dimension: 125×125mm±0.5mm |
| Oxygen concentration: ＜2×10E18atoms/cm |
3 |
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| Carbon concentration: ＜8×10E17atoms/cm |
3 |
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Resistivity: 0.8-3Ωcm, typically 1Ωcm
Life time: min.2μs
Thickness: 220+/-20μm
TTV: max.40μm
Saw Marks: max.20μm
Squaring Angle : 90°+/- 3.0°
Edge flaw: less than 10mm in length, 1.0mm in width
Chipping: depth ≤1.0 mm, no more than 2 chips allowed in one wafer. “V” shaped chip not permitted.
Surface: as cut and cleaned |
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| 产品规格 |
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Geometry: square
Conduction type: p boron doped
Wafer dimension: 156×156mm±0.5mm |
| Oxygen concentration: ＜2×10E18atoms/cm |
3 |
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| Carbon concentration: ＜8×10E17atoms/cm |
3 |
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Resistivity: 0.8-3Ωcm, typically 1Ωcm
Life time: min.2μs
Thickness: 220+/-40μm,
TTV: max.50μm
Saw Marks: max.20μm
Squaring Angle :90°+/- 3.0°
Edge flaw: less than 10mm in length, 1.0mm in width
Chipping: depth ≤1.0 mm, no more than 2 chips allowed in one wafer. “V” shaped chip not permitted.
Surface: as cut and cleaned |
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